ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS

Authors

  • Hamid Ghorbani
  • Dietrich Stoyan

DOI:

https://doi.org/10.5566/ias.v22.p147-152

Keywords:

dislocations, germ-grain model, intensity, Poison cluster process, Poison line process, silicon wafer, spherical contact distribution function

Abstract

Formulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs formeither a 'segment cluster' process or a 'line-based' Poisson point process. They are used in order to estimate the intensityl of the germprocess by means of the spherical contact distribution function. As an application the number of dislocations on a silicon wafer is estimated.

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Published

2011-05-03

How to Cite

Ghorbani, H., & Stoyan, D. (2011). ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS. Image Analysis and Stereology, 22(3), 147–152. https://doi.org/10.5566/ias.v22.p147-152

Issue

Vol. 22 No. 3 (2003)

Section

Original Research Paper