ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS

Hamid Ghorbani; Dietrich Stoyan

doi:10.5566/ias.v22.p147-152

ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS

Authors

Hamid Ghorbani
Dietrich Stoyan

DOI:

https://doi.org/10.5566/ias.v22.p147-152

Keywords:

dislocations, germ-grain model, intensity, Poison cluster process, Poison line process, silicon wafer, spherical contact distribution function

Abstract

Formulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs formeither a 'segment cluster' process or a 'line-based' Poisson point process. They are used in order to estimate the intensityl of the germprocess by means of the spherical contact distribution function. As an application the number of dislocations on a silicon wafer is estimated.

Downloads

Published

2011-05-03

Issue

Vol. 22 No. 3 (2003)

Section

Original Research Paper

How to Cite

Ghorbani, H., & Stoyan, D. (2011). ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS. Image Analysis and Stereology, 22(3), 147-152. https://doi.org/10.5566/ias.v22.p147-152